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2CERN, Geneva, Switzerland - ppt download
Bridge the Gap! Superluminescent LEDs. - EXALOS AG - High-Performance Light Sources. Made in Switzerland
Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS | Scientific.Net
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
Superluminescent LEDs enter the Mainstream - EXALOS AG - High-Performance Light Sources. Made in Switzerland
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Zener Diode Basic Operation and Applications
4H-SiC pn Diode Grown by LPE Method for High-Power Applications | Scientific.Net
Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging | Scientific.Net
Measuring the I-V Characteristic of PN Junction Devices with the HF2LI | Zurich Instruments
4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications | Scientific.Net
Lect. 5: PN Junction Diode (Razavi 2.2, 3.1)
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Germanium-Diode 1N60 DO-7 20 V 150 mA - Conrad Electronic Schweiz
1200V Merged PIN Schottky Diode with Soft ... - 5S Components
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